General Info

Summary of system capabilities
Vendor: JEOL JEOL press release: May 6, 2015
Purpose: Patterning nanometer scale features via electron-beam lithography

Important

  1. Material restrictions in effect: click here
  2. Training required prior to use: click here
  3. More info for lab members: Manuals and Processes

Specifications

  • On site system acceptance test results: click here
  • Gaussian beam litho system employing TFE gun & Vector Scan method
  • Choice of 50kV and 100kV accelerating voltage
  • 50 MHz pattern generator
  • 19 bit DAC
  • Stage positional step size of 0.125nm (high resolution mode) or 1nm (high speed mode)
  • Field size: 0.5mm x 0.5mm (high speed mode) or 62.5um x 62.5um (high resolution mode)
  • Available apertures: 300um, 130um, 90um, 60um, 40um, 25um
  • Stitching performance: <=+/-9nm (high resolution) or <=+/-20nm (high speed)
  • Overlay accuracy: <=+/-9nm (high resolution) or <=+/-20nm (high speed)
  • Measured minimum beam spot size: <= 2.9nm

Available Options

  • Automated aperture selection with software control
  • Access to GenIsys BEAMER, TRACER and Juspertor Layout Editor software packages

Available Substrate Fixtures

  • 2 inch wafer and pieces cassette
  • 3 inch wafer cassette
  • 4 inch wafer cassette
  • 6 inch wafer cassette