General Info

Summary of system capabilities

Vendor: TYSTAR
Model: Tytan 4600 Mini Fourstack Horizontal Furnace
Purpose: Deposition of doped & undoped films of Polysilicon via LPCVD


  1. Material restrictions in effect: click here
  2. Training required prior to use: click here
  3. More info for lab members: Manuals and Processes

Tube 3 of the Tystar furnace stack is designed to be swapped between two tubes for different LPCVD material depositions. The first material is an experimental SiC process which is deposited in the temperature range of 700-800°C. The second material is polycrystalline Silicon which may be deposited in the temperature range of 580-650°C in doped or undoped forms.

Uniformity for a 300 nm Polysilicon film should be 3% within wafer, 3% wafer-to-wafer, and 3% run-to-run. Uniformity for a 300 nm doped Polysilicon film should be 10% within wafer, 10% wafer-to-wafer, and 10% run-to-run with resistivity of 10 Ohm/sq.

Gases currently available on this system

  • N2
  • SiH4
  • 15% PH3 / 85% SiH4
  • NH3
  • SiH2Cl2
  • CH3SiH3
  • H2
  • C2H2


Until further notice, all pre-processed wafer smust undergo a full RCA cleaning before being introduced into this furnace tube. RCA cleaning is to be performed on the Diffusion Preclean Wetbench. If your process cannot tolerate an RCA clean, please submit an online Process Review Request with details of your process and constraints.

Additional Information

  • This system is configured to handle 4" diameter wafers with typical thickness of 550um (approx).
  • Photoresist-coated wafers are strictly prohibited since the system supports high temperature processes which are not compatible with photoresist films.