General Info
Summary of system capabilities
Purpose: UHV Scanning Tunneling Microscopy
Important
- Material restrictions in effect: click here
- Training is required prior to use: click here
- More info for lab members: Manuals and Processes
Atomic-resolution Scanning Tunneling Microscopy:
By measuring the tunneling current generated by biasing an atomically sharp probe and a flat, clean sample surface brought within several angstroms proximity in ultra-high vacuum chamber, the local density of states of the surface can be mapped. Images can be formed of the surface topography, atomic lattice and electronic surface states.
Equipment Specifications:
Sample size: 10 mm x 10 mm (standard flag-style sample plates)
Gap Voltage: +/- 1 V (30 uV steps) and +/- 10 V (300 uV steps)
Tunneling current: 1 pA to 300 nA with feedback loop active
Stability: Z stability ~ 2 pm, XY stability <1 angstrom in 24 hours at 5K
Operational temperature range: 5K up to Room-Temperature with counter heating. Liquid nitrogen/ Liquid helium cryostat built in to the SPM head. For cooling and holding times consult staff.
Scan range X/ Y/ Z :
10 um x 10 um x 1.5 um (RT)
4 um x 4 um x 0.4 um (77 K)
1.8 um x 1.8 um x 0.2 um (5 K)
4 - contact sample holder: Capable of applying lateral volatges acropss samples in-situ
UHV Preparation chamber: Resistive and direct sample heating, Argon sputter gun and in-situ sample cleaving station
QPlus Atomic force microscopy (AFM): Alternative imaging mode used to image single crystalline and insulating surfaces
Additional Information:
- All materials going into this system should specifically be listed in the authorized materials page.