General Info

Summary of system capabilities

Vendor: TYSTAR
Model: Tytan 4600 Mini Fourstack Horizontal Furnace
Purpose: Wet or dry thermal oxidation and thermal anneal

Important

  1. Material restrictions in effect: click here
  2. Training required prior to use: click here
  3. More info for lab members: Manuals and Processes

Tube 1 of the Tystar furnace stack is dedicated to wet (pyrogenic) and dry oxidation of Silicon and thermal annealing under Nitrogen & 10%H2/90%N2 ambient conditions. This tube is capable of processing up to 50 wafers with an upper temperature limit of 1100°C.

Uniformity for a 500 nm wet oxidation should be 3% within wafer, 3% wafer-to-wafer, and 3% run-to-run. Uniformity for a 200 nm dry oxidation should be 3% within wafer, 3% wafer-to-wafer, and 3% run-to-run.

Gases currently available on this system

  • N2
  • 10% H2 / 90% N2
  • O2
  • Ar
  • H2

Important Note on Cleanliness

  • Pre-processed wafers are NOT authorized in this furnace tube.
  • Wafers to be processed should be brought to the cleanroom in their original, sealed factory packaging.

Additional Information

This system is configured to handle 4" diameter wafers with typical thickness of 550um (approx).