General Info

Summary of system capabilities

Vendor:   Oxford Instruments
Model:     ICP380
Purpose:  Plasma-based dry etching of metal thin films and III-V substrates (GaAs & InP)


  1. Material restrictions in effect: click here
  2. Training required prior to use: click here
  3. More info for lab members: Manuals and Processes 
  4. Lower limit for ICP power is 500W.
    • Recipes operating at less than 500W are NOT PERMITTED since this may result in instability with high reflected powers. This may in turn damage the RF power supply & matching network. 

Gases available on this system

  • C4F8
  • SF6
  • O2
  • N2
  • Ar
  • Cl2
  • BCl3
  • CHF3
  • HBr    (not in service - contact staff)
  • H2  
  • CH4
  • SiCl4  (not in service - contact staff)

Additional Information

  • This system is configured to handle 4" diameter wafers with typical thickness of 550um (approx). Smaller substrates may be mounted on specially made carrier wafers; see staff for more information.