General Info

Summary of system capabilities

Vendor: Allwin21 Corp.
Model: AccuThermo AW 610
Purpose: Short duration, high-temperature processing of 4" or 6" wafers


  1. Material restrictions in effect: click here
  2. Training required prior to use: click here
  3. More info for lab members: Manuals and Processes

The AW610 rapid thermal processing (RTP) system uses high intensity visible radiation to heat single wafers for short process periods of time (typically 10 minutes or less) at precisely controlled temperatures (400°C-1200°C). The system is capable of annealing substrates in N2, Ar, O2 environments. The system is a cold wall, quartz chamber, which is heated with top and bottom arrays of high intensity halogen lamps using a closed-loop temperature control using either a pyrometer or a thermocouple. Typical processes for this tool include metal-silicide formation, very thin thermal oxidation and relief of ion implantation damage.

Gases currently available on this system

  • N2
  • O2
  • Ar

Important Note on Cleanliness

Any preprocessed wafer must undergo a full RCA cleaning before being introduced into this system. RCA cleaning is to be performed on the Diffusion Preclean Wetbench. If your process cannot tolerate an RCA clean, please submit an online Process Review Request with details of your process and constraints.

Additional Information

  • System is equipped to handle 3” – 6” wafers placed directly on the tray
  • Multi-pocket susceptor is available for annealing of III-V materials or IR transparent substrates. Substrate size is limited to <2” diameter in this case.