General Info

Summary of system capabilities

Vendor: TYSTAR
Model: Tytan 4600 Mini Fourstack Horizontal Furnace
Purpose: Low temperature oxide & doped oxide deposition via LPCVD


  1. Material restrictions in effect: click here
  2. Training required prior to use: click here
  3. More info for lab members: Manuals and Processes

Tube 4 of the Tystar furnace stack is dedicated to growing low temperature SiO2 (LTO) and doped SiO2 (DLTO) films via LPCVD. This tube is capable of processing up to 50 wafers with processing temperature of 400-450°C.

Uniformity for a 500 nm LTO film should be 5% within wafer, 5% wafer to wafer, and 5% run-to-run. Uniformity for a 500 nm DLTO film should be 5% within wafer, 10% wafer-to-wafer, and 5% run-to-run.

Gases currently available on this system

  • N2
  • 15% PH3 / 85% SiH4
  • O2
  • SiH4


Until further notice, all pre-processed wafer smust undergo a full RCA cleaning before being introduced into this furnace tube. RCA cleaning is to be performed on the Diffusion Preclean Wetbench. If your process cannot tolerate an RCA clean, please submit an online Process Review Request with details of your process and constraints.

Additional Information

  • This system is configured to handle 4" diameter wafers with typical thickness of 550um (approx).
  • Photoresist-coated wafers are strictly prohibited since the system supports high temperature processes which are not compatible with photoresist films.