General Info

Summary of system capabilities

Vendor: TYSTAR
Model: Tytan 4600 Mini Fourstack Horizontal Furnace
Purpose: Low stress silicon nitride deposition via LPCVD

Important

  1. Material restrictions in effect: click here
  2. Training required prior to use: click here
  3. More info for lab members: Manuals and Processes

Tube 2 of the Tystar furnace stack is dedicated to growing stoichiometric or low stress Si3N4 by LPCVD. This tube is capable of processing up to 50 wafers with an upper temperature limit of 900°C.

Uniformity for a stoichiometric 200 nm Si3N4 film should be 3% within wafer, 3% wafer-to-wafer, and 3% run-to-run. Uniformity for a 200 nm low stress Si3N4 film should be 5% within wafer, 10% wafer-to-wafer, and 5% run-to-run with a stress of approximately 300MPa.

Gases currently available on this system

  • N2
  • NH3
  • SiH2Cl2

Important

Until further notice, all pre-processed wafer smust undergo a full RCA cleaning before being introduced into this furnace tube. RCA cleaning is to be performed on the Diffusion Preclean Wetbench. If your process cannot tolerate an RCA clean, please submit an online Process Review Request with details of your process and constraints.

Additional Information

  • This system is configured to handle 4" diameter wafers with typical thickness of 550um (approx).
  • Photoresist-coated wafers are strictly prohibited since the system supports high temperature processes which are not compatible with photoresist films.