General Info
Etching of thin films via Ar ion milling
Important
- Material restrictions in effect: click here
- Training required prior to use: click here
- More info for lab members: Manuals and Processes
The AJA Ion Mill is designed for the physical etching of thin films via Ar ion bombardment.
The system is equipped with a Kaufman and Robinson 220mm RF Ion source capable of operation from 100-1200V.
The water-cooled sample holder is capable of accepting samples from small pieces up to 6” diameter and incorporates 0-90° tilting as well as rotation.
System is equipped with a Hiden Analytical SIMS probe to enable milling endpoint detection.
System is also equipped with one 2” sputter gun to enable RF sputtering of a passivation material on your sample once the milling process is complete.
Milling uniformity of SiO2 on Si should be better than ±3% over a 150 mm wafer. Chamber base pressure should be better than 2x10-7 Torr.