General Info

Summary of system capabilities

Vendor: Oxford Instruments
Model: System 100 PECVD / FlexAL ALD cluster system
Purpose: Deposition of various thin films via ALD or PECVD


  1. Material restrictions in effect: click here
  2. Training required prior to use: click here
  3. More info for lab members: Manuals and Processes

Film Types available via ALD

The Oxford PlasmaLab 100 FlexAL Atomic Layer Deposition (ALD) system has three precursors currently available and is characterized for the following processes:

  • Al2O3 plasma process (TMA precursor)
  • Al2O3 thermal process (TMA precursor)
  • TiO2 plasma process (TIIP precursor)
  • HfO2 plasma process (TEMAH precursor)

Film Types available via PECVD

The Oxford PlasmaLab 100 Plasma-Enchanced Chemical Vapour Deposition (PECVD) system has two recipes available and is characterized for the following processes:

  • Silicon nitride (ammonia free)
  • Silicon oxide (TEOS-based)

Additional Information

  • This system is configured to handle 4" diameter wafers with typical thickness of 550um (approx)
  • Photoresist-coated wafers are strictly prohibited since the system supports high temperature processes which are not compatible with photoresist films