General Info
Summary of system capabilities
Vendor: Oxford Instruments
Model: System 100 PECVD / FlexAL ALD cluster system
Purpose: Deposition of various thin films via ALD or PECVD
Model: System 100 PECVD / FlexAL ALD cluster system
Purpose: Deposition of various thin films via ALD or PECVD
Important
- Material restrictions in effect: click here
- Training required prior to use: click here
- More info for lab members: Manuals and Processes
Film Types available via ALD
The Oxford PlasmaLab 100 FlexAL Atomic Layer Deposition (ALD) system has three precursors currently available and is characterized for the following processes:
- Al2O3 plasma process (TMA precursor)
- Al2O3 thermal process (TMA precursor)
- TiO2 plasma process (TIIP precursor)
- HfO2 plasma process (TEMAH precursor)
Film Types available via PECVD
The Oxford PlasmaLab 100 Plasma-Enchanced Chemical Vapour Deposition (PECVD) system has two recipes available and is characterized for the following processes:
- Silicon nitride (ammonia free)
- Silicon oxide (TEOS-based)
Additional Information
- This system is configured to handle 4" diameter wafers with typical thickness of 550um (approx)
- Photoresist-coated wafers are strictly prohibited since the system supports high temperature processes which are not compatible with photoresist films