General Info

Summary of system capabilities

Vendor: Oxford Instruments
Model: System 100 PECVD / FlexAL ALD cluster system
Purpose: Deposition of various thin films via ALD or PECVD

Important

  1. Material restrictions in effect: click here
  2. Training required prior to use: click here
  3. More info for lab members: Manuals and Processes

Film Types available via ALD

The Oxford FlexAL Atomic Layer Deposition (ALD) system has four precursors currently available and is characterized for the following processes:

  • Al2O3 plasma process (TMA precursor), 100 nm max.
  • Al2O3 thermal process (TMA precursor), 100 nm max.
  • TiO2 plasma process (TIIP precursor), 25 nm max.
  • HfO2 plasma process (TEMAH precursor), 100 nm max.
  • SiO2 plasma process (BTBAS precursor), 30 nm max.

Film Types available via PECVD

The Oxford PlasmaLab 100 Plasma-Enchanced Chemical Vapour Deposition (PECVD) system has five standard recipes available and is characterized for the following processes:

  • Ammonia free silicon nitride (silane and nitrogen)
  • Low stress silicon nitride (silane, ammonia and nitrogen)
  • Silicon oxynitride (silane, ammonia and nitrous oxide)
  • Silicon dioxide (silane and nitrous oxide)
  • Amorphous Si:N:H (silane diluted in N2)

Additional Information

  • This system is configured to handle 100 mm (4") diameter wafers with typical thickness of 550 um (approx). Configuration for wafers from 2" to 200 mm is possible but requires staff intervention.
  • Photoresist-coated wafers are strictly prohibited since the system supports high temperature processes which are not compatible with photoresist films